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PTF210901
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
Description
The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Two-Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 1050 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW
-25 30 25 IM3 -35 20 -40 15 -45 Gain -50 -55 39 40 41 42 43 44 ACPR 10 5 Drain Efficiency
Features
* * Internal matching for wideband performance Typical two-carrier 3GPP WCDMA performance - Average output power = 19 W at -37 dBc - Efficiency = 25% Typical CW performance - Output power at P-1dB = 105 W - Gain = 15 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR at 28 V, 90 W (CW) output power
*
-30
Efficiency (%), Gain (dB)
IMD (dBc), ACPR (dBc)
* * *
Output Power, Avg. (dBm)
PTF210901E Package 30248
ESD: Electrostatic discharge sensitive device -- observe handling precautions!
RF Performance at TCASE = 25C unless otherwise indicated
WCDMA Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1050 mA, P OUT = 19 W AVG f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth 3.84 MHz, 8.0 dB peak/average @ 0.01% CCDF
Characteristic
Intermodulation Distortion Gain Drain Efficiency
Symbol
IMD Gps
Min
-- -- --
Typ
-37 15 25
Max
-- -- --
Units
dBc dB %
D
Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1050 mA, POUT = 90 W PEP, f = 2170 MHz, tone spacing = 1 MHz Characteristic
Gain Drain Efficiency Intermodulation Distortion Data Sheet 1
Symbol
Gps
Min
13.5 36 --
Typ
15 38 -30
Max
-- -- -28
Units
dB % dBc 2004-01-16
D
IMD
PTF210901
Electrical Characteristics at TCASE = 25C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, ID = 10 A VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 1050 mA VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.1 3.2 0.01
Max
-- 1.0 -- 4.0 1.0
Units
V A V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 90 W CW) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 389 2.22 -40 to +150 0.45
Unit
V V C W W/C C C/W
Typical Performance in broadband test fixture
Broadband Circuit Performance
VDD = 28 V, IDQ = 1050 mA, POUT = 20 W CW
40 0
55 54
Power Sweep, Pulsed Conditions
VDD = 28 V, IDQ = 1050 mA, f = 2140 MHz, pulse period = 1 ms, 0.8% duty cycle
Gain (dB), Efficiency (%)
Input Return Loss (dB)
Output Power (dBm)
35 30 25 20 15 10 5 2080 Input Return Loss 2120 2160 Gain Efficiency
-5 -10 -15 -20 -25 -30 -35 2200
P-3dB = 51.3 dBm
Ideal
53 52 51 50 49 48 47 46 45 30 31 32 33 34 35 36 37 38 39 40 Actual P-1dB = 50.6 dBm
Frequency (MHz)
Input Power (dBm)
Data Sheet
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2004-01-16
PTF210901
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power for selected currents
VDD = 28 V, f = 2140 MHz, tone spacing = 1 MHz
-20 -25 -30 0.75 A -20 -25 -30 0.85 A 1.15 A
Intermodulation Distortion Products vs. Tone Spacing
VDD = 28 V, IDQ = 1050 mA, POUT = 90 W PEP, f = 2140 MHz
IMD (dBc)
IMD (dBc)
-35 -40 -45 -50 -55 -60 -65 37 39 0.95 A
3rd Order
-35 -40 -45 -50 5th Order
1.05 A 41 43 45 47 49 51
-55 -60 0
7th Order 10 20 30
Output Power (dBm), PEP
Tone Spacing (MHz)
Two-Tone Drive-Up
VDD = 28 V, IDQ = 1050 mA, f = 2140 MHz, tone spacing = 1 MHz
45 40 -20 -25 IM3 Efficiency IM5 -30
Single-Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 1050 mA, f = 2140 MHz, 3GPP WCDMA signal, Test Model 1 w/ 16 DPCH 67% clipping, P/A R = 8.7 dB, 3.84 MHz BW
30 -30 Drain Efficiency -35
35 30 25 20 15 10 5 0 39 41 43 45
-40 -45 -50 IM7 -55 -60 -65 47 49 51
15 Gain 10 ACPR Up 5 ACPR Low 0 34 35 36 37 38 39 40 41 42 43 44
-45 -50 -55 -60
Output Power (dBm), PEP
Output Power (dBm), Avg.
Data Sheet
3
2004-01-16
ACPR (dB)
IMD (dBc)
-35
Drain Efficiency (%), Gain (dB)
Drain Efficiency (%)
25 20
-40
PTF210901
Typical Performance (cont.)
IM3, Drain Efficiency and Gain vs. Supply Voltage
IDQ = 1050 mA, f = 2140 MHz, POUT = 90 W PEP, tone spacing = 1 MHz
45 40 35 Drain Efficiency -5 -10 -15 -20 IM3 -25 -30 -35 Gain -40 -45 -50 22 24 26 28 30 32 34
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03 7.50 A 9.00 A 1.01 1.00 0.99 0.98 0.97 0.96 -20 5 30 55 80 105 6.00 A 4.50 A 3.00 A 1.50 A
30 25 20 15 10 5 0
Drain Voltage (V)
Normalized Bias Voltage
1.02
Efficiency (%), Gain (dB)
IM3 (dBc)
Case Temperature (C)
Broadband Circuit Impedance Data
Z0 = 50
0.1
D
Z Source
Z Load
Z Load
G
0.0
2200 MHz
0.1
S
Frequency
MHz 2070 2110 2140 2170 2200 R 5.11 4.78 4.57 4.35 4.12
Z Source
jX -7.00 -6.74 -6.50 -6.30 -6.11 R 2.14 2.03 1.99 1.92 1.88
Z Load
jX 0.62 0.97 1.21 1.45 1.67
TOW ARD LOAD GT HS
Z Source
0.1
L EN A VE
2200 MHz 2070 MHz
W <---
0. 2
Data Sheet
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2004-01-16
0.2
2070 MHz
PTF210901
Test Circuit
Reference Circuit Schematic for f = 2140 MHz Circuit Information DUT PTF210901E PCB 0.76 mm [0.030"] thick, r = 4.5 Microstrip Value at 2140 MHz 0.375 , 50 0.199 , 39.2 0.015 , 11.5 0.037 , 60.4 0.195 , 60.4 0.073 , 7.5 0.199 , 55.4 0.049 , 4.98 0.089 , 4.98 0.151 , 41.9 0.381 , 50
LDMOS Transistor 2 oz. copper Dimensions: L x W (mm.) 28.45 x 1.40 14.83 x 2.06 1.07 x 10.06 2.90 x 0.97 15.11 x 0.97 4.98 x 17.73 15.32 x 1.14 3.30 x 25.17 5.99 x 25.17 11.30 x 1.85 29.13 x 1.40
TMM4 Dimensions: L x W (in.) 1.120 x 0.055 0.584 x 0.081 0.042 x 0.396 0.114 x 0.038 0.595 x 0.038 0.196 x 0.698 0.603 x 0.045 0.130 x 0.991 0.236 x 0.991 0.445 x 0.073 1.147 x 0.055
l1 l2 l3 l4 l5 l6 l7, l8 l9 l10 l11 l12
Data Sheet
5
2004-01-16
PTF210901
Test Circuit (cont.)
C15 C16 R7 R9 R8 R6 C14 R5 R4 R10 C1 C2 R3 RF_OUT C9 C8 C11 C10 C13 C12 Q1 C4 C5 C6 C7 LM
+28V
QQ1
VDD
C3 RF_IN
VDD
TMM4
ERA210901-2
Reference Circuit1 (not to scale) Component C1, C6, C12 C2, C3, C4, C9, C10 C5, C11 C7, C13 C8 C14, C15, C16 QQ1 Q1 R1, R2 R3 R4 R5 R6 R7 R8 R9 R10 Description Capacitor, 0.01 F Capacitor, 8.2 pF Capacitor, 1 F, ceramic, 50 V Capacitor, 100 F, 50 V, electrolytic Capacitor, 1.1 pF Capacitor, 0.01 F Voltage regulator Transistor Resistor, 12K ohm, 1/4 W, 1206 Resistor, 10 ohm, 1/4 W, 1206 Resistor, 1.2K ohm, 1/10 W, 0603 Resistor, 1.3K ohm, 1/10 W, 0603 Resistor, variable 2K ohm, 4 W Resistor, 10 ohm, 1/4 W, 1206 Resistor, 24K ohm, 1/4 W, 1206 Resistor, 1K ohm, 1/4 W, 1206 Resistor, 3K ohm, 1/4 W, 1206 Manufacturer Digi-Key ATC ATC Digi-Key ATC Digi-Key Digi-Key Infineon Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment PCC1772CT-ND 100B 8R2 920DC105KW100 P5182-ND 100B OR6 PCC1772CT-ND LM 7805 BCP56 P12KECT-ND P10ECT-ND P1.2KGCT-ND P1.3KGCT-ND 3224 W-202ETR-ND P10ECT-ND P24KECT-ND P1.0KECT-ND P3.0KECT-ND
1Gerber Files for this circuit available on request.
Data Sheet
6
2004-01-16
PTF210901
Ordering Information
Type PTF210901E Package Outline 30248 Package Description Thermally enhanced, with flange Marking PTF210901E
Package Outline Specifications Package 30248
(45 X 2.72 [.107])
C L
D S
9.78 [.385] 19.43 0.51 [.765.020] +0.10 LID 9.40 -0.15 [.370+.004 -.006 C L ]
2X 4.830.51 [.190.020]
G
2X R1.63 [.064] 4X R1.52 [.060]
2X 12.70 [.500] 27.94 [1.100] 1.02 [.040]
19.810.20 [.780.008]
SPH 1.57 [.062] 3.760.38 [.142.015]
0.0381 [.0015] -A-
34.04 [1.340] 0.51 [.020]
ERA-H-30248-2-1-2301
Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001 ] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
7
2004-01-16
PTF210901 Revision History: Previous Version: Page 5 2004-01-16 2003-12-22, Data Sheet
Subjects (major changes since last revision) Circuit schematic adjusted
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International
Edition 2004-01-16 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 2004-01-16

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